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J608 - 2SJ608

Features

  • Package Dimensions unit : mm 2085A [2SJ608] 10.5 1.9 4.5 1.2 Low ON-resistance. Ultrahigh speed switching. Low-voltage drive. Mounting height 9.5mm. Meets radial taping. 2.6 1.4 1.2 7.5 1.0 8.5 1.6 0.5 0.5 1 2 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VD.

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    Ordering number : ENN6995 2SJ608 P-Channel Silicon MOSFET 2SJ608 Ultrahigh Speed Switching Applications Features • • • • • Package Dimensions unit : mm 2085A [2SJ608] 10.5 1.9 4.5 1.2 Low ON-resistance. Ultrahigh speed switching. Low-voltage drive. Mounting height 9.5mm. Meets radial taping. 2.6 1.4 1.2 7.5 1.0 8.5 1.6 0.5 0.5 1 2 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO : FLP Ratings -30 ± 20 --4 -16 1.
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