B1121 - 2SB1121

Sanyo

Datasheet Details

Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity and wide ASO.
Fast switching speed.
Very small size making it easy to provide high- density, small-sized hybrid IC’s. [2SB1121/2SD1621] E : Emitter C : Collector B : Base ( ) : 2SB1121 Specifications SANYO : PCP (Bottom view) Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector.

📁 B1121 Similar Datasheet

B110 - Low Voltage X-Ray Tube (Ferranti)
B1100 - 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
B1100B - 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
B1100BQ - 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes)
B1100CALRP - SIDACtor Protection Thyristors (Littelfuse)
B1100CCLRP - SIDACtor Protection Thyristors (Littelfuse)
B1100LB - 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
B1100Q - 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes)

Other Datasheets by Sanyo

Published: May 31, 2015 |