High reliability. Package Dimensions
unit:mm 2049B
[2SB1266/2SD1902]
( ) : 2SB1266
Specifications
E : Emitter C : Collector B : Base SANYO : TO-220MF
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Junction Temperature Storage Temperature
Symbol V.
Ordering number:EN2538A
PNP/NPN Triple Diffused Planar Type Silicon Transistors
2SB1266/2SD1902
AF Power Amplifier Applications
Features
· Suitable for sets whose heighit is restricted. · Wide ASO (adoption of MBIT process). · High reliability.
Package Dimensions
unit:mm 2049B
[2SB1266/2SD1902]
( ) : 2SB1266
Specifications
E : Emitter C : Collector B : Base SANYO : TO-220MF
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO
IC ICP PC
Tj Tstg
Tc=25˚C
Conditions
Ratings (–)60 (–)60 (–)6 (–)3 (–)8 1.