C3576 Datasheet - Sanyo

C3576 2SC3576

C3576 Features

* Adoption of FBET process.

* High DC current gain (hFE=800 to 3200).

* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).

* High VEBO (VEBO≥15V). Package Dimensions unit:mm 2033 [2SC3576] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base

Datasheet Details

C3576

Sanyo

106.51 KB

2sc3576.

📁 Related Datasheet

C3570 2SC3570 (NEC)

C3577 2SC3577 (SavantIC)

C350 Phase Control SCR (Powerex Power Semiconductors)

C3500 Silicon Power Transistor (ETC)

C3502 2SC3502 (Sanyo Semicon Device)

C3503 2SC3503 (Sanyo Semicon Device)

C3504 2SC3504 (Sanyo Semicon Device)

C3505 2SC3505 (SavantIC)

C3506 Silicon NPN Transistor (Panasonic)

C3507 2SC3507 (Panasonic)

TAGS

C3576 2SC3576 Sanyo

Image Gallery

C3576 Distributor