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C3651 2SC3651

C3651 Description

Ordering number:EN1779A NPN Epitaxial Planar Silicon Transistor 2SC3651 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications .

C3651 Features

* High DC current gain (hFE=500 to 2000).
* High breakdown voltage (VCEO≥100V).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
* High VEBO (VEBO≥15V).
* Very small size making it easy to provide high- density, small-sized hybrid IC’s. Package Dimensions unit:mm 2

C3651 Applications

* Applications

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Datasheet Details

Part number
C3651
Manufacturer
Sanyo
File Size
88.94 KB
Datasheet
C3651-Sanyo.pdf
Description
2SC3651

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2SC3651 Sanyo
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