• Part: ECH8601M
  • Description: N-Channel Silicon MOSFET
  • Category: MOSFET
  • Manufacturer: SANYO
  • Size: 52.39 KB
Download ECH8601M Datasheet PDF
SANYO
ECH8601M
Features - Low ON-resistance. - Built-in gate protection resistor. - 2.5V drive. - Best suited for Li B charging and discharging switch. - mon-drain type. - Halogen free pliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1000mm2✕0.8mm) 1unit When mounted on ceramic substrate (1000mm2✕0.8mm) Ratings 24 ±12 8 60 1.5 1.6 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current...