Ordering number:ENN2746A
N-Channel Junction Silicon FET
2SK1065
High-Frequency General-Purpose Amplifier Applications
Features
· Ultrasmall package facilitates miniaturization in end products.
· Small Crss (Crss=0.04pF typ).
0.425
Package Dimensions
unit:mm 2057A
[2SK1065]
0.3
3
0.15
0.2
0 to 0.1
2.1 1.250
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature
Symbol
VGDO IG ID PD Tj
Tstg
0.425
12 0.65 0.65
2.0
0.3 0.6 0.