LC35V256ET-70W Datasheet, Ce, Sanyo

LC35V256ET-70W Features

• Ce
• Supply voltage range: 3.0 to 3.6 V
• Access time: 70 ns (maximum)
• Standby current: 0.8 µA (Ta ≤ 60°C) 4.0 µA (Ta ≤ 70°C)
• Operating temperature:

PDF File Details

Part number:

LC35V256ET-70W

Manufacturer:

Sanyo

File Size:

46.87kb

Download:

📄 Datasheet

Description:

256k (32k words x 8 bits) sram control pins: oe and ce.

LC35V256ET-70W Application

• Applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whos

TAGS

📁 Related Datasheet

LC35V256EM - 256K (32K words x 8 bits) SRAM Control pins: OE and CE (Sanyo)
Ordering number : ENN6303 CMOS IC LC35V256EM, ET-70W 256K (32K words × 8 bits) SRAM Control pins: OE and CE Overview The LC35V256EM-70W and LC35V25.

LC35V256EM-70W - 256K (32K words x 8 bits) SRAM Control pins: OE and CE (Sanyo)
Ordering number : ENN6303 CMOS IC LC35V256EM, ET-70W 256K (32K words × 8 bits) SRAM Control pins: OE and CE Overview The LC35V256EM-70W and LC35V25.

LC35V1000BM - Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM (Sanyo)
Ordering number : ENN*7056 CMOS IC LC35V1000BM, BTS-70U Asynchronous Silicon Gate 1M (131,072 words ×8 bits) SRAM Preliminary Overview The LC35V1000.

LC35V1000BTS-70U - Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM (Sanyo)
Ordering number : ENN*7056 CMOS IC LC35V1000BM, BTS-70U Asynchronous Silicon Gate 1M (131,072 words ×8 bits) SRAM Preliminary Overview The LC35V1000.

LC3514 - 1024 x 4-Bit High Speed CMOS Static RAM (Sanyo)
.

LC3514A - 1024 x 4-Bit High Speed CMOS Static RAM (Sanyo)
.

LC3516 - 2048 words x 8-Bits CMOS SRAM (Sanyo Electric)
.

LC3516A - CMOS SRAM (Sanyo Electric)
.

LC3516A - 2048 x 8 CMOS RAM (Sanyo Semiconductor Corporation)
.

LC3516D - 2048 words x 8-Bits SRAM (Sanyo Electric)
.