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LC35V1000BM Datasheet - Sanyo

Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM

LC35V1000BM Features

* Low-voltage operation: 3.0 to 3.6 V

* Wide operating temperature range:

* 40 to +85°C

* Access time: 70 ns (maximum): LC35V1000BM and LC35V1000BTS-70U.

* Low current drain Standby mode: 0.05 µA (typical

* ) at Ta = +25°C

* : When VCC = 3.0 V 10.0 µA (max

LC35V1000BM Datasheet (178.33 KB)

Preview of LC35V1000BM PDF

Datasheet Details

Part number:

LC35V1000BM

Manufacturer:

Sanyo

File Size:

178.33 KB

Description:

Asynchronous silicon gate 1m (131 /072 words x 8 bits) sram.
Ordering number : ENN 7056 CMOS IC LC35V1000BM, BTS-70U Asynchronous Silicon Gate 1M (131,072 words ×8 bits) SRAM Preliminary Overview The LC35V.

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TAGS

LC35V1000BM Asynchronous Silicon Gate 131 072 words bits SRAM Sanyo

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