LC35V1000BM Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM

Sanyo

Description

Ordering number : ENN *7056 CMOS IC LC35V1000BM, BTS-70U Asynchronous Silicon Gate 1M (131,072 words ×8 bits) SRAM Preliminary Overview The LC35V.

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Datasheet Specifications

Part number: LC35V1000BM
Manufacturer: Sanyo
File Size: 178.33 KB
Datasheet: LC35V1000BM_SanyoSemiconDevice.pdf
Description: Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM

Features

* Low-voltage operation: 3.0 to 3.6 V
* Wide operating temperature range:
* 40 to +85°C
* Access time: 70 ns (maximum): LC35V1000BM and LC35V1000BTS-70U.
* Low current drain Standby mode: 0.05 µA (typical
* ) at Ta = +25°C
* : When VCC = 3.0 V 10.0 µA (max

Applications

* that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO

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LC35V1000BM Asynchronous Silicon Gate 131 072 words bits SRAM Sanyo

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