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LC35W1000BM Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM

LC35W1000BM Description

Ordering number : ENN *6624 CMOS IC LC35W1000BM, BTS-70U/10U Asynchronous Silicon Gate 1M (131,072 words × 8 bits) SRAM Preliminary Overview The .

LC35W1000BM Features

* Low-voltage operation: 2.7 to 3.6 V
* Wide operating temperature range:
* 40 to +85°C
* Access time: 70 ns (maximum): LC35W1000BM and LC35W1000BTS-70U. 100 ns (maximum): LC35W1000BM and LC35W1000BTS-10U.
* Low current drain Standby mode: 0.1 µA (typical
* )

LC35W1000BM Applications

* that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO

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Datasheet Details

Part number
LC35W1000BM
Manufacturer
Sanyo
File Size
165.88 KB
Datasheet
LC35W1000BM_SanyoSemiconDevice.pdf
Description
Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM

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Asynchronous Silicon Gate 131 072 words bits SRAM Sanyo
Sanyo LC35W1000BM-like datasheet