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LC35W1000BM - Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM

Features

  • Low-voltage operation: 2.7 to 3.6 V.
  • Wide operating temperature range:.
  • 40 to +85°C.
  • Access time: 70 ns (maximum): LC35W1000BM and LC35W1000BTS-70U. 100 ns (maximum): LC35W1000BM and LC35W1000BTS-10U.
  • Low current drain Standby mode: 0.1 µA (typical.
  • ) at Ta = +25°C 10.0 µA (maximum) at Ta =.
  • 40 to +70°C 20.0 µA (maximum) at Ta =.
  • 40 to +85°C.
  • Data retention voltage: 2.0 to 3.6 V.
  • No clock required (fully static ci.

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Datasheet preview – LC35W1000BM

Datasheet Details

Part number LC35W1000BM
Manufacturer SANYO (now Panasonic)
File Size 165.88 KB
Description Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM
Datasheet download datasheet LC35W1000BM Datasheet
Additional preview pages of the LC35W1000BM datasheet.

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Full PDF Text Transcription

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Ordering number : ENN*6624 CMOS IC LC35W1000BM, BTS-70U/10U Asynchronous Silicon Gate 1M (131,072 words × 8 bits) SRAM Preliminary Overview The LC35W1000BM and LC35W1000BTS-70U/10U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provide two chip enable pins (CE1 and CE2) for device select/deselect control and one output enable pin (OE) for output control. They feature high speed, low power, and a wide operating temperature range.This makes them optimal for use in systems that require high speed, low power, and battery backup. They also support easy memory expansion. Package Dimensions unit: mm 3205A-SOP32 [LC35W1000BM-70U/10U] 32 17 0.8 11.2 3.1max 0.15 0.2 (2.7) 20.5 Features • Low-voltage operation: 2.7 to 3.
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