* Supply voltage range: 2.7 to 3.6 V
* Access time: 100 ns (maximum)
* Standby current: 0.8 µA (Ta ≤ 60°C) 4.0 µA (Ta ≤ 70°C)
* Operating temperature:
* 10 to +70°C
* Data retention voltage: 2.0 to 3.6 V
* All I/O levels: CMOS compatible (0.8 VC
LC35W256ET-10W Datasheet (46.87 KB)
LC35W256ET-10W
Sanyo
46.87 KB
256k (32k words x 8 bits) sram control pins: oe and ce.
Ordering number : ENN6304 CMOS IC LC35W256EM, ET-10W 256K (32K words × 8 bits) SRAM Control pins: OE and CE Overview The LC35W256EM-10W and LC35W25.
📁 Related Datasheet
LC35W256EM 256K (32K words x 8 bits) SRAM Control pins: OE and CE (Sanyo)
LC35W256EM-10W 256K (32K words x 8 bits) SRAM Control pins: OE and CE (Sanyo)
LC35W1000BM Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM (Sanyo)
LC35W1000BTS-10U Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM (Sanyo)
LC35W1000BTS-70U Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM (Sanyo)
LC3514 1024 x 4-Bit High Speed CMOS Static RAM (Sanyo)
LC3514A 1024 x 4-Bit High Speed CMOS Static RAM (Sanyo)
LC3516 2048 words x 8-Bits CMOS SRAM (Sanyo Electric)
LC3516A CMOS SRAM (Sanyo Electric)
LC3516A 2048 x 8 CMOS RAM (Sanyo Semiconductor Corporation)
