* High breakdown voltage (VRRM=600V).
* High reliability.
* One-point fixing type plastic mold package facilitating easy mounting and heat dissipation.
* Fast reverse recovery time.
* Low noise at the time of reverse recovery. Specifications Absolute Maximum Ra
RG2006LN
Sanyo
89.45 KB
Low vf / high-speed switching diode.
Ordering number : ENA1434 RG2006LN SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF High-Speed Switching .
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