2N5732 Datasheet | SavantIC

DESCRIPTION - With TO-3 package - High current capability APPLICATIONS - For linear amplifier and inductive switching applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 100 80 7 20 30 87.5 150 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.17 UNIT /W Savant IC Semiconductor .. Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN SYMBOL TYP. UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=10 A;IB=1 A VCEsat-2 Collector-emitter saturation voltage IC=20 A;IB=4 A Base-emitter on voltage IC=10 A; VCE=4V ICBO Collector cut-off current VCB=100V; IE=0 0.1 m...