A1008 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-1.0A ,IB=-0.1A,L=1mH IC=-1A; IB=-0.1A IC=-1A ;IB=-0.1A VCB=-100V; VCE=-5V 40 40 MIN -100 2SA1008 SYMBOL...