* z z z Complementary to 2SC1623K High DC Current Gain: hFE = 200 TYP. (VCE = -6V, IC = -1mA) High Voltage: VCEO = -50V SOT-23 3 Collector 1 Base PACKAGE DIMENSIONS Dim A 2 Emitter Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0
2SA812K
SeCoS Elektronische Bauelemente
265.84 KB
Pnp transistor.
2SA812K
Elektronische Bauelemente -50 V, -100 mA PNP Epitaxial Planar Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen and lead f.
📁 Related Datasheet
2SA812 - PNP Transistor
(NEC)
DATA SHEET
SILICON TRANSISTOR
2SA812A
PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
FEATURES
• Complementary to 2SC1623A • High DC Current Gain: hFE =.
2SA812 - PNP Transistor
(WEITRON)
PNP General Purpose Transistors
P b Lead(Pb)-Free
2SA812
1 2
3
SOT-23
MAXIMUM RATINGS(Ta=25°C)
Rating Collector-Base Voltage
Collector-Emitter Vo.
2SA812 - SOT-23 BIPOLAR TRANSISTORS
(Rectron)
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)
2SA812
FEATURES
* Power dissipation
PCM :
0.2 W(Tamb=25O.
2SA812 - PNP Transistor
(HOTTECH)
Plastic-Encapsulate Transistors
FEATURES
Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V
2SA812.
2SA812 - PNP Transistors
(Kexin)
SMD Type
Transistors
PNP Transistors 2SA812
Features
High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) High Voltage: VCEO = -50 V
.
2SA812 - PNP Transistor
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SA812 TRANSISTOR (PNP)
FEATURES z Complementary to 2SC1623.
2SA812 - PNP Transistor
(DC COMPONENTS)
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SA812
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for audio.
2SA812 - Silicon Epitaxial Planar Transistor
(GME)
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z Commplementary to 2SC1623. z High DC current gain:hFE=200typ.
(VCE=-6.0V,IC=.
