* Package outline
* Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. FE
* ALToUwRpErofile surface mounted application in order to optimize board space. ƽ
* HLigohwVpooltwageer:loVsCsEO, h=ig-5h0eVff.iciency. ƽ
2SA812RLT1 Datasheet (517.17 KB)
2SA812RLT1
WILLAS
517.17 KB
General purpose transistors.
WILLAS
2SA812xLTF1MT1H2R0U-M+
1.0AGSeURnFeArCaE lMPOUuNrTpSoCHsOeTTTKYraBnARsRiIsERtoRErsCTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free P.
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