Datasheet Specifications
- Part number
- 2SA814
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 88.51 KB
- Datasheet
- 2SA814_ToshibaSemiconductor.pdf
- Description
- Silicon PNP Transistor
Description
: 2SA814' 2SA81 5, MEDIUM POWER AMPLIFIER APPLICATIONS.DRIVER STAGE AMPLIFIER APPLICATIONS.SILICON PIMP EPITAXIAL BASE MESA TYPE Unit in mm 10.3 M.
Features
* . High Breakdown Voltage: VcEO="120V (2SA814) : VCEO=-100V (2SA815) . Complementary to 2SC1624 and 2SC1625. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector- Base Voltage 2SA814 2SA815 Collector- Emitter Voltage 2SA814 2SA815 Emitter-Base Voltage Collector Current Emitter Current CollectoApplications
* DRIVER STAGE AMPLIFIER APPLICATIONS. SILICON PIMP EPITAXIAL BASE MESA TYPE Unit in mm 10.3 MAX. 0Z6±2SA814 Distributors
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