* . High Breakdown Voltage: VcEO="120V (2SA814) : VCEO=-100V (2SA815) . Complementary to 2SC1624 and 2SC1625. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector- Base Voltage 2SA814 2SA815 Collector- Emitter Voltage 2SA814 2SA815 Emitter-Base Voltage Collector Current Emitter Current Collecto
2SA815
Toshiba ↗ Semiconductor
88.51 KB
Silicon pnp transistor.
:
2SA814'
2SA81 5,
MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS.
SILICON PIMP EPITAXIAL BASE MESA TYPE
Unit in mm 10.3 M.
📁 Related Datasheet
2SA811A - PNP SILICON TRANSISTOR
(NEC)
.
2SA812 - PNP Transistor
(NEC)
DATA SHEET
SILICON TRANSISTOR
2SA812A
PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
FEATURES
• Complementary to 2SC1623A • High DC Current Gain: hFE =.
2SA812 - PNP Transistor
(WEITRON)
PNP General Purpose Transistors
P b Lead(Pb)-Free
2SA812
1 2
3
SOT-23
MAXIMUM RATINGS(Ta=25°C)
Rating Collector-Base Voltage
Collector-Emitter Vo.
2SA812 - SOT-23 BIPOLAR TRANSISTORS
(Rectron)
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)
2SA812
FEATURES
* Power dissipation
PCM :
0.2 W(Tamb=25O.
2SA812 - PNP Transistor
(HOTTECH)
Plastic-Encapsulate Transistors
FEATURES
Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V
2SA812.
2SA812 - PNP Transistors
(Kexin)
SMD Type
Transistors
PNP Transistors 2SA812
Features
High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) High Voltage: VCEO = -50 V
.
2SA812 - PNP Transistor
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SA812 TRANSISTOR (PNP)
FEATURES z Complementary to 2SC1623.
2SA812 - PNP Transistor
(DC COMPONENTS)
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SA812
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for audio.
