2SA817A
Toshiba ↗ Semiconductor
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Silicon pnp epitaxial type transistor.
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2SA817 - Silicon PNP Epitaxial Type Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA817
2SA817
Audio Frequency Amplifier Applications
Unit: mm
· Complementary to 2SC16.
2SA817A - Silicon PNP transistor
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2SA817A - SILICON PNP TRANSISTOR
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:、/Purpose: Driver stage amplifier and voltage amplifier. : 30~35W , 2SC1627A(3DG1627A)。
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2SA812 - PNP Transistor
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DATA SHEET
SILICON TRANSISTOR
2SA812A
PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
FEATURES
• Complementary to 2SC1623A • High DC Current Gain: hFE =.
2SA812 - PNP Transistor
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PNP General Purpose Transistors
P b Lead(Pb)-Free
2SA812
1 2
3
SOT-23
MAXIMUM RATINGS(Ta=25°C)
Rating Collector-Base Voltage
Collector-Emitter Vo.
2SA812 - SOT-23 BIPOLAR TRANSISTORS
(Rectron)
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)
2SA812
FEATURES
* Power dissipation
PCM :
0.2 W(Tamb=25O.
2SA812 - PNP Transistor
(HOTTECH)
Plastic-Encapsulate Transistors
FEATURES
Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V
2SA812.
2SA812 - PNP Transistors
(Kexin)
SMD Type
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PNP Transistors 2SA812
Features
High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) High Voltage: VCEO = -50 V
.
2SA812 - PNP Transistor
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SA812 TRANSISTOR (PNP)
FEATURES z Complementary to 2SC1623.