Datasheet Details
- Part number
- SSG4530C
- Manufacturer
- SeCoS Halbleitertechnologie
- File Size
- 744.38 KB
- Datasheet
- SSG4530C-SeCoSHalbleitertechnologie.pdf
- Description
- N & P-Ch Enhancement Mode Power MOSFET
SSG4530C Description
SSG4530C Elektronische Bauelemente N-Ch: 5.3A, 30V, RDS(ON) 82 mΩ P-Ch: -5.2A, -30V, RDS(ON) 80 mΩ N & P-Ch Enhancement Mode Power MOSFET RoHS Compli.
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat diss.
SSG4530C Features
* Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space Fast switching speed High performance trench technology
A C
N J H G
Millimeter Min. Max. 5.8 6.20 4.80 5.00 3.80 4.00 0° 8° 0.50 0.93 0.19 0.25 1.27 TYP. K
F
E
REF. A B
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