SSG4536C N & P-Ch Enhancement Mode Power MOSFET

SeCoS Halbleitertechnologie

Description

SSG4536C Elektronische Bauelemente N-Ch: 7.1A, 30V, RDS(ON) 28 mΩ P-Ch: -6A, -30V, RDS(ON) 39 mΩ N & P-Ch Enhancement Mode Power MOSFET RoHS Complian.
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat diss.

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Datasheet Specifications

Part number: SSG4536C
Manufacturer: SeCoS Halbleitertechnologie
File Size: 126.72 KB
Datasheet: SSG4536C-SeCoSHalbleitertechnologie.pdf
Description: N & P-Ch Enhancement Mode Power MOSFET

Features

* Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space Fast switching speed High performance trench technology A C N J H G Millimeter Min. Max. 5.8 6.20 4.80 5.00 3.80 4.00 0° 8° 0.50 0.93 0.19 0.25 1.27 TYP. K F E REF. A B

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SSG4536C P-Ch Enhancement Mode Power MOSFET SeCoS Halbleitertechnologie

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