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SSPS920NE

N-Channel MOSFET

SSPS920NE Features

* Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. REF. A B C D Millimeter Min. Max. 3.0 BSC. 2.8 BSC. 0.20 0.35 0.65 BSC. REF. E F G Millimeter Min. Max. 0.08 0.25

SSPS920NE General Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered products such as computers, printers, PCMCIA c.

SSPS920NE Datasheet (487.50 KB)

Preview of SSPS920NE PDF

Datasheet Details

Part number:

SSPS920NE

Manufacturer:

SeCoS Halbleitertechnologie

File Size:

487.50 KB

Description:

N-channel mosfet.
SSPS920NE Elektronische Bauelemente 7.1 A, 20 V, RDS(ON) 20 mΩ Dual-N Channel Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies hal.

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SSPS920NE N-Channel MOSFET SeCoS Halbleitertechnologie

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