SSPS920NE N-Channel MOSFET

SeCoS Halbleitertechnologie

Description

SSPS920NE Elektronische Bauelemente 7.1 A, 20 V, RDS(ON) 20 mΩ Dual-N Channel Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies hal.
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat diss.

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Datasheet Specifications

Part number: SSPS920NE
Manufacturer: SeCoS Halbleitertechnologie
File Size: 487.50 KB
Datasheet: SSPS920NE-SeCoSHalbleitertechnologie.pdf
Description: N-Channel MOSFET

Features

* Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. REF. A B C D Millimeter Min. Max. 3.0 BSC. 2.8 BSC. 0.20 0.35 0.65 BSC. REF. E F G Millimeter Min. Max. 0.08 0.25

Applications

* are DC-DC converters and power management In portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. DFN3

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SSPS920NE N-Channel MOSFET SeCoS Halbleitertechnologie

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