BC847S - NPN Silicon Multi-Chip Transistor
BC847S Features
* Power dissipation PCM : 0.3 W (Tamp.= 25OC) Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 50 V Operating & Storage junction Temperature OO Tj, Tstg : -55 C~ +150 C C 1 B2 E2 .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF 8o 0o .096(2.45) .085(2.15) .053(1.35) .04
