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SDT9A5P02

P-Channel Enhancement Mode Power MOSFET

SDT9A5P02 Features

* Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 9A5P02 . = Date code PACKAGE INFORMATION Package MPQ DFN2×2-6J 3K Leader Size 7 inch DFN2x2-6J REF. A B C D E F G Millimeter Min. Max. 1.924 2.076 1.924 2.076 0.46 0.66 0.65 TYP. 0.20 0.40 0

SDT9A5P02 General Description

The SDT9A5P02 is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The SDT9A5P02 meet the RoHS and Green Product requirement with full function reliability approved. FEAT.

SDT9A5P02 Datasheet (611.93 KB)

Preview of SDT9A5P02 PDF

Datasheet Details

Part number:

SDT9A5P02

Manufacturer:

SeCoS

File Size:

611.93 KB

Description:

P-channel enhancement mode power mosfet.
Elektronische Bauelemente SDT9A5P02 -9.5A, -20V, RDS(O ) 24mΩ P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specif.

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SDT9A5P02 P-Channel Enhancement Mode Power MOSFET SeCoS

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