SDT3A5N06-C N-Channel Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SDT3A5 06-C 3.5A, 60V, RDS(O ) 100 mΩ -Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” speci.
The SDT3A5N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most.

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Datasheet Specifications

Part number: SDT3A5N06-C
Manufacturer: SeCoS
File Size: 332.68 KB
Datasheet: SDT3A5N06-C-SeCoS.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 3A5N06 . = Date code PACKAGE INFORMATION Package MPQ DFN2×2-6J 3K Leader Size 7 inch DFN2x2-6J REF. A B C D E F G Millimeter Min. Max. 1.924 2.076 1.924 2.076 0.46 0.66 0.65 TYP. 0.20 0.40 0

SDT3A5N06-C Distributors

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SDT3A5N06-C N-Channel Enhancement Mode Power MOSFET SeCoS

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