SDT3A5N06-C Datasheet (SeCoS) - N-Channel Enhancement Mode Power MOSFET

SDT3A5N06-C, N-Channel Enhancement Mode Power MOSFET

The SDT3A5N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The SDT3A5N06-C meet the RoHS and Green Product requirement with full function reliability approved.

SDT3A5N06-C Features

* Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 3A5N06 . = Date code PACKAGE INFORMATION Package MPQ DFN2×2-6J 3K Leader Size 7 inch DFN2x2-6J REF. A B C D E F G Millimeter Min. Max. 1.924 2.076 1.924 2.076 0.46 0.66 0.65 TYP. 0.20 0.40 0