* Low RDS(on) trench technology Low thermal impedance Fast switching speed DFN2x2-6L-J APPLICATIONS Battery-powered instruments Portable Computing Mobile Phones GPS Units and Media Players PACKAGE INFORMATION Package MPQ DFN2×2-6L-J 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Typ
SDT3N03
SeCoS
338.08 KB
Dual-n enhancement mode mosfet.
Elektronische Bauelemente
SDT3N03
3.5A, 30V, RDS(ON) 55 mΩ Dual-N Enhancement Mode MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen .
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