SJP110SN10J-C
SeCoS
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N-channel mosfet. SJP110SN10J-C uses Shielded Gate Trench Technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a
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SJPA-D3 - Schottky Diode
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VRSM = 30 V, IF(AV) = 1.0 A Schottky Diode
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Data Sheet
Description
The SJPA-D3 is a 30 V, 1.0 A Schottky diode with allowing improvements in .
SJPA-L3 - Schottky Diode
(Sanken)
VRSM = 30 V, IF(AV) = 3.0 A Schottky Diode
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Data Sheet
Description
The SJPA-L3 is a 30 V, 3.0 A Schottky diode with allowing improvements in .
SJPB-D4 - Schottky Diode
(Sanken)
VRSM = 40 V, IF(AV) = 1.0 A Schottky Diode
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Data Sheet
Description
The SJPB-D4 is a 40 V, 1.0 A Schottky diode with allowing improvements in .
SJPB-D6 - Schottky Diode
(Sanken)
VRSM = 60 V, IF(AV) = 1.0 A Schottky Diode
SJPB-D6
Data Sheet
Description
The SJPB-D6 is a 60 V, 1.0 A Schottky diode with allowing improvements in .
SJPB-D9 - Schottky Diode
(Sanken)
VRSM = 90 V, IF(AV) = 1.0 A Schottky Diode
SJPB-D9
Data Sheet
Description
The SJPB-D9 is a 90 V, 1.0 A Schottky diode with allowing improvements in .
SJPB-H4 - Schottky Diode
(Sanken)
VRSM = 40 V, IF(AV) = 2.0 A Schottky Diode
SJPB-H4
Data Sheet
Description
The SJPB-H4 is a 40 V, 2.0 A Schottky diode with allowing improvements in .
SJPB-H6 - Schottky Diode
(Sanken)
VRSM = 60 V, IF(AV) = 2.0 A Schottky Diode
SJPB-H6
Data Sheet
Description
The SJPB-H6 is a 60 V, 2.0 A Schottky diode with allowing improvements in .
SJPB-H9 - Schottky Diode
(Sanken)
VRSM = 90 V, IF(AV) = 2.0 A Schottky Diode
SJPB-H9
Data Sheet
Description
The SJPB-H9 is a 90 V, 2.0 A Schottky diode with allowing improvements in .