SJP65SN10J-C Datasheet, Mosfet, SeCoS

SJP65SN10J-C Features

• Mosfet High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation

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Part number:

SJP65SN10J-C

Manufacturer:

SeCoS

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. SJP65SN10J-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

SJP65SN10J-C Application

• Applications DFN5x6-8J FEATURES High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability a

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SJP65SN10J-C

SeCoS

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