* High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability APPLICATIONS High side switch in POL DC/DC converter Secondary
SJP65SN10J-C Datasheet (241.65 KB)
SJP65SN10J-C
SeCoS
241.65 KB
N-channel enhancement mode power mosfet.
Elektronische Bauelemente
SJP65SN10J-C
65A, 100V, RDS(ON) 11mΩ N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” speci.
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