SMG138K Datasheet, Mosfet, SeCoS

SMG138K Features

  • Mosfet
  • Simple drive Requirement
  • Small package outline D All Dimension in mm
  • RoHS Compliant Product G Marking : 138E S Absolute Maximum Ratings Parameter Dra

PDF File Details

Part number:

SMG138K

Manufacturer:

SeCoS

File Size:

330.92kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The SMG138K utilized advanced processing techniques to achieve the lowest possible on-resistance extremely efficient and cost-effecti

Datasheet Preview: SMG138K 📥 Download PDF (330.92kb)
Page 2 of SMG138K Page 3 of SMG138K

TAGS

SMG138K
N-Channel
Enhancement
Mode
Power
MosFET
SeCoS

📁 Related Datasheet

SMG130 - 3-axis gyroscope (Bosch)
Department AE/ESE3 Datasheet SMG130 Page 0/47 Version 1.0 No. 1 279 929 820 Date 01.10.2015 0 Document History Version Comment 1.0 Initial Version:.

SMG1332E - N-Channel Enhancement Mode Power MosFET (SeCoS)
SMG1332E Elektronische Bauelemente 600mA, 20V,RDS(ON)600m£[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SMG1332E.

SMG1333 - P-Channel Enhancement Mode Power MosFET (SeCoS)
SMG1333 -550mA, -20V,RDS(ON) 800m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of -C speci.

SMG1 - Voltage-Controlled Attenuator Module (Tyco Electronics)
% %& '%(') & * +,- %.) /0,* '01 +1 - 2 3 45 6 '01 & *+)- & 0* '0++ ( 0 '01 9& + 0- & 0* : ( 3 45 6% /783 45 6 ;< = $ > ? @ A $ $ $ @ .

SMG1 - Voltage-Controlled Attenuator Module (MA-COM)
G1 / SMG1 Voltage-Controlled Attenuator Module 5 to 2000 MHz Features  AVAILABLE IN SURFACE MOUNT  LOW VSWR: < 1.8:1 (TYP.)  LOW INSERTION LOSS: 2.

SMG120N40E1 - IGBT (Silikron)
Main Product Characteristics: VCES 1250V IC 40A VCE(sat) 1.8V GC E Features and Benefits:  Trench FS technology offering  High speed switchi.

SMG120N40E1DA - IGBT (Silikron)
Main Product Characteristics: VCES 1250V IC 40A VCE(sat) 1.75V GC E TO - 247 Features and Benefits: ◼ Trench FS technology offering ◼ High spe.

SMG120N50E1 - IGBT (Silikron)
Main Product Characteristics: VCES 1250V IC 50A VCE(sat) 1.9V GC E Features and Benefits:  Trench FS technology offering  High speed switchi.

SMG120N60E1 - IGBT (Silikron)
Main Product Characteristics: VCES 1250V IC 60A VCE(sat) 1.9V GC E Features and Benefits:  Trench FS technology offering  High speed switchi.

SMG120N60EP - IGBT (Silikron)
Main Product Characteristics: VCES 1250V IC 60A VCE(sat) 1.69V GC E TO – 247Plus-3L Features and Benefits: ◼ Trench FS technology offering ◼ H.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts