SMG3018K - N-Channel MOSFET

SeCoS

Datasheet Details

The SMG3018K utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and costeffectiveness device.

RoHS Compliant.
Simple Drive Requirement.
Small Package Outline H Drain Gate Source C J K L S All Dimension in mm Marking : 3018E D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 30 ± 20 640 500 950 1.38 0.01 Unit V V mA mA mA W W / oC o Total Power Dissipation Linear Derating Factor Operatin.

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Published: Aug 23, 2013 |