SMG3401 - P-Channel MOSFET

SeCoS

Datasheet Details

The SMG3401 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device.

Small Package Outline.
Lower Gate Charge.
RoHS Compliant H Gate Source D All Dimension in mm G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -30 ±12 -4.2 -3.5 30 1.38 0.01 -55~+150 Unit V V A A.

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Published: Aug 23, 2013 |