SMS123
Elektronische Bauelemente
0.17A, 100V, RDS(ON) 6Ω N-Ch Enhancement Mode Power MOSFET
Ro HS pliant Product A Suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
The SMS123 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift.
MECHANICAL DATA
Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage
APPLICATION
DC-DC converter circuit Load Switch
MARKING B123
PACKAGE INFORMATION
Package
SOT-23
3K
Leader Size 7 inch
SOT-23
Top View
1 2
D F GH J
REF.
A B C D E F
Millimeter Min. Max. 2.70 3.10 2.10 2.65 1.20 1.40 0.89 1.17 1.78 2.04 0.30 0.50
REF.
G H J K L
Millimeter Min. Max. 0.09 0.18 0.35 0.65 0.08 0.20
0.6 REF. 0.95 BSC.
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain
- Source...
