SPR100N30SG N-Ch Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SPR100 30SG 100A, 30V, RDS(O ) 2.1mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies h.
The SPR100N30SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for mo.

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Datasheet Specifications

Part number: SPR100N30SG
Manufacturer: SeCoS
File Size: 688.78 KB
Datasheet: SPR100N30SG-SeCoS.pdf
Description: N-Ch Enhancement Mode Power MOSFET

Features

* RDS(on)≦2.1mΩ @VGS=10V RDS(on)≦3.3mΩ @VGS=4.5V High speed power switching, Logic Level Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested PR-8PP Package MARKING 100N30SG Date Code REF. A B C D E F Millimeter Min. Max. 4.9 5.1 5.7 5.9 5.95 6.2 1.27 BSC. 0.35 0.49 0.1 0.2 RE

SPR100N30SG Distributors

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SPR100N30SG N-Ch Enhancement Mode Power MOSFET SeCoS

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