SPR35N10S-C N-Channel Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SPR35 10S-C 35A, 100V, RDS(O ) 17mΩ -Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifi.
The SPR35N10S-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for mos.

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Datasheet Specifications

Part number: SPR35N10S-C
Manufacturer: SeCoS
File Size: 455.09 KB
Datasheet: SPR35N10S-C-SeCoS.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* Lower Gate Charge Advanced high cell density Trench technology Green Device Available MARKING PR-8PP 35N10S = Date code PACKAGE INFORMATION Package MPQ PR-8PP 3K Leader Size 13 inch ORDER INFORMATION Part Number Type SPR35N10S-C Lead (Pb)-free and Halogen-free REF. A B C D E F Millimet

SPR35N10S-C Distributors

📁 Related Datasheet

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SPR35N10S-C N-Channel Enhancement Mode Power MOSFET SeCoS

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