SPR82N06S-C N-Channel Shielded Gate Trench Power MOSFET

SeCoS

Description

Elektronische Bauelemente SPR82N06S-C 82A, 60V, RDS(ON) 5.2mΩ N-Channel Shielded Gate Trench Power MOSFET RoHS Compliant Product A suffix of “-C” sp.
The SPR82N06S-C is the Shielded Gate Technology N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most.

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Datasheet Specifications

Part number: SPR82N06S-C
Manufacturer: SeCoS
File Size: 465.95 KB
Datasheet: SPR82N06S-C-SeCoS.pdf
Description: N-Channel Shielded Gate Trench Power MOSFET

Features

* Shielded Gate Trench Technology
* Super Low Gate Charge
* Green Device Available MARKING PR-8PP 82N06S   = Date Code PACKAGE INFORMATION Package MPQ PR-8PP 3K Leader Size 13 inch ORDER INFORMATION Part Number Type S SPR82N06S-C S Lead (Pb)-free and Halogen-free S G

SPR82N06S-C Distributors

📁 Related Datasheet

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SPR82N06S-C N-Channel Shielded Gate Trench Power MOSFET SeCoS

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