SPRD4160-C Datasheet (SeCoS) - Dual N-Ch Enhancement Mode Power MOSFET

SPRD4160-C, Dual N-Ch Enhancement Mode Power MOSFET

The SPRD4160-C is the highest performance trench Dual N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SPRD4160-C meet the RoHS and Green Product requirement with full function reliability approv

SPRD4160-C Features

* Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 4160 =Date Code PACKAGE INFORMATION Package MPQ DFN5x6-8D 3K Leader Size 13 inch REF. A B C D E F G Millimeter Min. Max. 5.70 5.80 5.90 6.10 4.80 5.00 3.61 3.96 0.06 0.20 3.38 3.78 1.1