SPRD4160-C Dual N-Ch Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SPRD4160-C 42A, 60V, RDS(ON) 12mΩ Dual N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifie.
The SPRD4160-C is the highest performance trench Dual N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for.

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Datasheet Specifications

Part number: SPRD4160-C
Manufacturer: SeCoS
File Size: 540.80 KB
Datasheet: SPRD4160-C-SeCoS.pdf
Description: Dual N-Ch Enhancement Mode Power MOSFET

Features

* Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 4160 =Date Code PACKAGE INFORMATION Package MPQ DFN5x6-8D 3K Leader Size 13 inch REF. A B C D E F G Millimeter Min. Max. 5.70 5.80 5.90 6.10 4.80 5.00 3.61 3.96 0.06 0.20 3.38 3.78 1.1

SPRD4160-C Distributors

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SPRD4160-C Dual N-Ch Enhancement Mode Power MOSFET SeCoS

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