SPRD4511-C Datasheet - SeCoS

SPRD4511-C N & P-Ch Enhancement Mode Power MOSFET

The SPRD4511-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SPRD4511-C meet the RoHS and Green Product requirement with full function reliability ap.

SPRD4511-C Features

* Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 4511 =Date Code PACKAGE INFORMATION Package MPQ DFN5x6-8D 3K Leader Size 13 inch REF. A B C D E F G Millimeter Min. Max. 5.7 5.8 5.9 6.1 4.8 5 3.61 3.96 0.06 0.20 3.38 3.78 1.1 -

SPRD4511-C Datasheet (643.82 KB)