SPRD4511-C N & P-Ch Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SPRD4511-C -Ch: 11A, 100V, RDS(O ) 150mΩ P-Ch: -9A, -100V, RDS(O ) 210mΩ & P-Ch Enhancement Mode Power MOSFET RoHS Complia.
The SPRD4511-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge.

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Datasheet Specifications

Part number: SPRD4511-C
Manufacturer: SeCoS
File Size: 643.82 KB
Datasheet: SPRD4511-C-SeCoS.pdf
Description: N & P-Ch Enhancement Mode Power MOSFET

Features

* Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 4511 =Date Code PACKAGE INFORMATION Package MPQ DFN5x6-8D 3K Leader Size 13 inch REF. A B C D E F G Millimeter Min. Max. 5.7 5.8 5.9 6.1 4.8 5 3.61 3.96 0.06 0.20 3.38 3.78 1.1 -

SPRD4511-C Distributors

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SPRD4511-C P-Ch Enhancement Mode Power MOSFET SeCoS

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