SSD13P06-C P-Channel Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SSD13P06-C -13A , -60V , RDS(O ) 90mΩ P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” spec.
The SSD13P06-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most.

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Datasheet Specifications

Part number: SSD13P06-C
Manufacturer: SeCoS
File Size: 523.91 KB
Datasheet: SSD13P06-C-SeCoS.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* Advanced high cell density Trench technology Lower Gate Charge Green Device Available MARKING 13P06 = Date code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD13P06-C Lead (Pb)-free and Halogen-free TO-252 A B C D GE K HF N

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SSD13P06-C P-Channel Enhancement Mode Power MOSFET SeCoS

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