SSD10N10J-C N-Ch Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SSD10N10J-C 10A , 100V , RDS(ON) 152mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifie.
The SSD10N10J-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for mos.

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Datasheet Specifications

Part number: SSD10N10J-C
Manufacturer: SeCoS
File Size: 397.37 KB
Datasheet: SSD10N10J-C-SeCoS.pdf
Description: N-Ch Enhancement Mode Power MOSFET

Features

* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Green Device Available MARKING 10N10J Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD10N10J-C Lead (Pb)-free and Halogen-fr

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SSD10N10J-C N-Ch Enhancement Mode Power MOSFET SeCoS

SeCoS SSD10N10J-C-like datasheet