SSD10N10J-C Datasheet, Mosfet, SeCoS

SSD10N10J-C Features

• Mosfet Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Green Device Available MARKING 10N10J Date Code PACKAGE INFORMATION Package MPQ

PDF File Details

Part number:

SSD10N10J-C

Manufacturer:

SeCoS

File Size:

397.37kb

Download:

📄 Datasheet

Description:

N-ch enhancement mode power mosfet. The SSD10N10J-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and ga

SSD10N10J-C Application

• Applications . TO-252(D-Pack) FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Green De

TAGS

SSD10N10J-C

SeCoS

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