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SSD1030P P-Channel Enhancement Mode MOSFET

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Description

P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 65 @VGS = - 10V -30V -15A 115 @VGS = - 5V 130 @VGS = - 4.5V G S D S.

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Datasheet Specifications

Part number
SSD1030P
Manufacturer
South Sea Semiconductor
File Size
176.87 KB
Datasheet
SSD1030P-SouthSeaSemiconductor.pdf
Description
P-Channel Enhancement Mode MOSFET

Features

* Super high density cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -30 +

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