SSD2030P - P-Channel Enhancement Mode MOSFET
(South Sea Semiconductor)
P-Channel Enhancement Mode MOSFET
Product Summary
VDS (V) ID (A)
RDS(ON) (mΩ) Max 40 @VGS = - 10V -30V -20A 65 @VGS = - 5V 75 @VGS = - 4.5V
G S D
SSD.
SSD2007A - Dual N-CHANNEL POWER MOSFET
(Fairchild Semiconductor)
Dual N-CHANNEL POWER MOSFET
FEATURES
Extremely Lower RDS(ON) Improved Inductive Ruggedness Fast Switching Times Rugged Polysilicon Gate Cell S.
SSD2009A - Dual N-CHANNEL POWER MOSFET
(Fairchild Semiconductor)
Dual N-CHANNEL POWER MOSFET
FEATURES
Lower RDS(ON) Improved Inductive Ruggedness Fast Switching Times Low Input Capacitance Extended Safe Op.
SSD2011A - Dual P-CHANNEL POWER MOSFET
(Fairchild Semiconductor)
Dual P-CHANNEL POWER MOSFET
FEATURES
Lower RDS(ON) Improved Inductive Ruggedness Fast Switching Times Low Input Capacitance Extended Safe Op.
SSD2019A - Dual P-Channel Power MOSFET
(Fairchild Semiconductor)
Dual P-CHANNEL POWER MOSFET
FEATURES
Lower RDS(ON) Improved Inductive Ruggedness Fast Switching Times Low Input Capacitance Extended Safe Op.
SSD2025 - Dual N-CHANNEL POWER MOSFET
(Fairchild Semiconductor)
Dual N-CHANNEL POWER MOSFET
FEATURES
Lower RDS(on) Improved Inductive Ruggedness Fast Switching Times Low Input Capacitance Extended Safe Op.
SSD20N03 - N-Ch Enhancement Mode Power MOSFET
(SeCoS)
SSD20N03
Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 20 A, 30 V, RDS(ON) 52 mΩ
RoHS Compliant Product A suffix of “-C” specifies halo.
SSD20N06 - N-channel MOSFET
(SeCoS)
Elektronische Bauelemente
SSD20 06
20A , 60V , RDS(O ) 40mΩ -Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halo.