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SSD2019A - Dual P-Channel Power MOSFET

Key Features

  • ! Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1, G2 SSD2019A 8 SOIC S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View D1 D2 Product Summary Part Number SSD2019A BVDSS -20V RDS(on) 0.11Ω ID -3.4A S1, S2 P-Channel MOSFET Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TA=25℃ Continuous Drain Curre.

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Dual P-CHANNEL POWER MOSFET FEATURES ! Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1, G2 SSD2019A 8 SOIC S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View D1 D2 Product Summary Part Number SSD2019A BVDSS -20V RDS(on) 0.11Ω ID -3.4A S1, S2 P-Channel MOSFET Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TA=25℃ Continuous Drain Current TA=70℃ Drain Current-Pulsed Gate-to-Source Voltage Total Power Dissipation ( TA=25℃ ) ( TA=70℃ ) Operating and Junction Storage Temperature Range ① Value -20 -3.4 -2.7 -8.0 ±12 2.0 1.