SSD2019A Datasheet | Fairchild Semiconductor

FEATURES ! Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1, G2 8 SOIC S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View D1 D2 Product Summary Part Number SSD2019A BVDSS -20V RDS(on) 0.11Ω ID -3.4A S1, S2 P-Channel MOSFET Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TA=25℃ Continuous Drain Current TA=70℃ Drain Current-Pulsed Gate-to-Source Voltage Total Power Dissipation ( TA=25℃ ) ( TA=70℃ ) Operating and Junction Storage Temperature Range ① Value -20 -3.4 -2.7 -8.0 ±12 2.0 1.3 - 55 to +150 W ℃ A V Units V A Thermal Resistance Symbol RθJA Characteristic Junction-to-Ambient Typ. -Max. 62.5 Units ℃/W ▲ ◀ Rev. A1 Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol BVDSS VGS(th) IGSS IDSS IDON RDS(on) gfs td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current On-State Drain-Source Current Static Drain-Source On-State Resistance Forward Transconductance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Charge ② ② Min. Typ. Max. Units -20 -0.8 -----8.0 ----------100 100 -1.0 -5.0 -V V n A n A μA A Ω Dual P-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=-250μA VDS= -5V ,ID=-250μA VGS=-12V VGS=12V VDS=-16V VDS=-10V,TC=55℃ VDS=-5V ,VGS=-4.5V VGS=-4.5V,ID=-3.2A VGS=-3.0V,ID=-2.0A VGS=-2.7V,ID=-1.0A VDS =-9.0V,ID=-3.4A VDD=-6.0V,ID=-1.0A, -- 0.086 0. 11 -- 0.103 0.15 -- 0.108 0.19 8.0 ---------18 17 49 17 13 3.4 4.6 40 80 70 40 20 -- S ns VGS=-4.5V, ②③ VDS=-6.0V,VGS=-4.5V, n C ID=-3.2A ②③ Source-Drain Diode Ratings and Characteristics Symbol IS VSD trr Characteristic Continuous Source Current (Body Diode) Diode Forward Voltage ②...