SSD2011A Datasheet | Fairchild Semiconductor

FEATURES ! Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1, G2 8 SOIC S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View D1 D2 Product Summary Part Number SSD2011A BVDSS - 60V RDS(on) 0.280Ω ID - 2.0A S1, S2 P-Channel MOSFET Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TA=25℃ Continuous Drain Current TA=70℃ Drain Current-Pulsed (2) Gate-to-Source Voltage Total Power Dissipation ( TA=25℃ ) ( TA=70℃ ) Operating and Junction Storage Temperature Range Value - 60 - 2.0 - 1.6 - 10.0 ±20 2.0 1.3 - 55 to +150 W ℃ A V Units V A Thermal Resistance Symbol RθJA Characteristic Junction-to-Ambient Typ. -Max. 62.5 Units ℃/W ▲ ◀ Rev. A Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol BVDSS VGS(th) IGSS IDSS IDON RDS(on) gfs td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current On-State Drain-Source Current Static Drain-Source On-State Resistance Forward Transconductance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Charge ② ② Min. Typ. Max. Units -60 -1.0 -----10 -------------------5.0 7.0 16 37 17 16 2.2 4.0 ---100 100 -2.0 -25 -0.28 0.5 -25 30 60 40 30 --n C ns V V n A n A μA A Ω S Dual P-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=-250μA VDS= -5V ,ID=-250μA VGS=-20V VGS=20V VDS=-40V VDS=-40V,TJ=55℃ VDS=-5V, VGS=-10V VGS=-10V,ID=-2.0A VGS=-4.5V,ID=-1.6A VDS =-15V,ID=-2.0A VDD=-30V,ID=-1.0A, R0=6.0Ω, ②③ VDS=-30V,VGS=-10V, ID=-2.0A ②③ Source-Drain Diode Ratings and Characteristics Symbol IS VSD trr Characteristic Continuous Source Current (Body Diode) Diode Forward Voltage ② Min. Typ. Max. Units -----Reverse Recovery Time ②...