SSD2025 Datasheet | Fairchild Semiconductor

FEATURES ! Lower RDS(on) ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1 ,G2 ▼ ▼ 8 SOIC S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View D1,D2 D1,D2 Product Summary Part Number SSD2025 BVDSS 60V RDS(on) 0.10Ω ID 3.3A S1 ,S2 N -Channel MOSFET Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TA=25℃ Continuous Drain Current TA=70℃ Drain Current-Pulsed Gate-to-Source Voltage Total Power Dissipation ( TA=25℃ ) ( TA=70℃ ) Operating and Junction Storage Temperature Range ① Value 60 3.3 2.6 10.0 ±20 2.0 1.3 - 55 to +150 W ℃ A V Units V A Thermal Resistance Symbol RθJA Characteristic Junction-to-Ambient Typ. -Max. 62.5 Units ℃/W ▼ ▼ Rev. A1 Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol BVDSS VGS(th) IGSS IDSS IDON RDS(on) g FS td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current On-State Drain-Source Current Static Drain-Source On-State Resistance Forward Transconductance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Charge ② ② Min. Typ. Max. Units 60 1.0 ----10 ---------100 -100 1.0 25 -V V n A n A μA A Ω S Dual N-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=250μA VDS= 5V ,ID=250μA VGS=20V VGS=-20V VDS=48V VDS=48V,TC=55℃ VDS=5V ,VGS=10V VGS=10V,ID=3.3A VGS=4.5V,ID=2.5A VDS =15V,ID=3.3A VDD=30V,ID=1.0A, R0=6.0Ω, ②③ -- 0.065 0.1 -- 0.084 0.2 --------7.0 16 18 40 23 18 2.3 4.7 -25 30 50 40 30 --- ns n C VDS=30V,VGS=10V, ID=3.3A ②③ Source-Drain Diode Ratings and Characteristics Symbol IS VSD trr Characteristic Continuous Source Current (Body Diode) Diode Forward Voltage ② -----70 1.7 1.2 100 A V ns Min. Typ. Max. Units Test...