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SSD3030P - P-Channel Enhancement Mode MOSFET

Key Features

  • Super high density cell design for low RDS(ON) . Rugged and reliable. TO-252 package. Pb free. G S.

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Datasheet Details

Part number SSD3030P
Manufacturer South Sea Semiconductor
File Size 177.95 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSD3030P Datasheet

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P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 25 @VGS = -10V -30V -30A 45 @VGS = -5V 55 @VGS = -4.5V G S D SSD3030P TO-252 D FEATURES Super high density cell design for low RDS(ON) . Rugged and reliable. TO-252 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -30 + - 25 -30 -60 -1.