Datasheet4U Logo Datasheet4U.com

SSD2030P

P-Channel Enhancement Mode MOSFET

SSD2030P Features

* Super high density cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -30 +

SSD2030P Datasheet (176.49 KB)

Preview of SSD2030P PDF

Datasheet Details

Part number:

SSD2030P

Manufacturer:

South Sea Semiconductor

File Size:

176.49 KB

Description:

P-channel enhancement mode mosfet.
P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 40 @VGS = - 10V -30V -20A 65 @VGS = - 5V 75 @VGS = - 4.5V G S D SSD.

📁 Related Datasheet

SSD2030N - N-Channel MOSFET (South Sea Semiconductor)
SSD2030N N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 30 @VGS = 10V 30V 20A 55 @VGS = 4.5V G S D TO-252 D FEAT.

SSD2007A - Dual N-CHANNEL POWER MOSFET (Fairchild Semiconductor)
Dual N-CHANNEL POWER MOSFET FEATURES ‰ Extremely Lower RDS(ON) ‰ Improved Inductive Ruggedness ‰ Fast Switching Times ‰ Rugged Polysilicon Gate Cell S.

SSD2009A - Dual N-CHANNEL POWER MOSFET (Fairchild Semiconductor)
Dual N-CHANNEL POWER MOSFET FEATURES Lower RDS(ON) Improved Inductive Ruggedness Fast Switching Times Low Input Capacitance Extended Safe Op.

SSD2011A - Dual P-CHANNEL POWER MOSFET (Fairchild Semiconductor)
Dual P-CHANNEL POWER MOSFET FEATURES Lower RDS(ON) Improved Inductive Ruggedness Fast Switching Times Low Input Capacitance Extended Safe Op.

SSD2019A - Dual P-Channel Power MOSFET (Fairchild Semiconductor)
Dual P-CHANNEL POWER MOSFET FEATURES Lower RDS(ON) Improved Inductive Ruggedness Fast Switching Times Low Input Capacitance Extended Safe Op.

SSD2025 - Dual N-CHANNEL POWER MOSFET (Fairchild Semiconductor)
Dual N-CHANNEL POWER MOSFET FEATURES Lower RDS(on) Improved Inductive Ruggedness Fast Switching Times Low Input Capacitance Extended Safe Op.

SSD20N03 - N-Ch Enhancement Mode Power MOSFET (SeCoS)
SSD20N03 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 20 A, 30 V, RDS(ON) 52 mΩ RoHS Compliant Product A suffix of “-C” specifies halo.

SSD20N06 - N-channel MOSFET (SeCoS)
Elektronische Bauelemente SSD20 06 20A , 60V , RDS(O ) 40mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halo.

TAGS

SSD2030P P-Channel Enhancement Mode MOSFET South Sea Semiconductor

Image Gallery

SSD2030P Datasheet Preview Page 2 SSD2030P Datasheet Preview Page 3

SSD2030P Distributor