* Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb Free. S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit 30 + - 2
SSD3030N
South Sea Semiconductor
43.87 KB
N-channel mosfet.
SSD3030N
N-Channel Enhancement Mode MOSFET
Product Summary
VDS (V) ID (A)
RDS(ON) (m ) Max
D
TO-252
17 @VGS = 10V 30V 30A 35 @VGS = 4.5V
G S
D
FEA.
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