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SSD30N10J Datasheet - SeCoS

SSD30N10J N-Channel MOSFET

SSD30N10J is designed to stand high energy in the avalanche mode and switch efficiently. It also offers a drain-to-source diode fast recovery time. It is designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. TO-252.

SSD30N10J Features

* High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation A B C D GE MARKING CJU30N10 = Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inc

SSD30N10J Datasheet (269.81 KB)