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SSD30N10J N-Channel MOSFET

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Description

Elektronische Bauelemente SSD30N10J 30A, 100V, RDS(ON) 31mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies hal.
SSD30N10J is designed to stand high energy in the avalanche mode and switch efficiently.

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Datasheet Specifications

Part number
SSD30N10J
Manufacturer
SeCoS
File Size
269.81 KB
Datasheet
SSD30N10J-SeCoS.pdf
Description
N-Channel MOSFET

Features

* High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation A B C D GE MARKING CJU30N10 = Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inc

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