SSD30N10J Datasheet (SeCoS) - N-Channel MOSFET

SSD30N10J, N-Channel MOSFET

SSD30N10J is designed to stand high energy in the avalanche mode and switch efficiently.

It also offers a drain-to-source diode fast recovery time.

It is designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.

TO-252

SSD30N10J Features

* High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation A B C D GE MARKING CJU30N10 = Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inc