* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available Drain REF. A B C D GE K M J HF MARKING 3055 Date Code N O P Gate PACKAGE INFORMATION Package TO-252 MPQ 2.
SSD3055
SeCoS
509.79 KB
N-channel mosfet.
SSD3055
Elektronische Bauelemente 18A , 30V , RDS(ON) 22Ω N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen.
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