SSD35P06-C P-Channel MOSFET

SeCoS

Description

Elektronische Bauelemente SSD35P06-C -35A, -60V, RDS(O ) 25mΩ P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies h.
The SSD35P06-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most.

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Datasheet Specifications

Part number: SSD35P06-C
Manufacturer: SeCoS
File Size: 313.43 KB
Datasheet: SSD35P06-C-SeCoS.pdf
Description: P-Channel MOSFET

Features

* Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 35P06 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD35P06-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS Parame

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SSD35P06-C P-Channel MOSFET SeCoS

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